PZT/LaNiO_3/LaAlO_3结构制备及性能研究  

Study on PZT /LaNiO_3/ LaAlO_3 Heterostructures and Its Properties

作　　者：张洪伟[1] 张树人[1] 黄文[1] 刘劲松[1] 杨成韬[1] 杜善义[2] 

机构地区：[1]电子科技大学电子薄膜与集成器件重点实验室,四川成都610054 [2]哈尔滨工业大学材料学院,黑龙江哈尔滨150001

出　　处：《压电与声光》2007年第4期442-444,共3页Piezoelectrics & Acoustooptics

基　　金：国家基础研究资助项目(51310Z)

摘　　要：利用激光脉冲法在LaAlO3衬底上沉积制备LaNiO3薄膜作为底电极材料,其上利用射频磁控溅射制备了PZT铁电薄膜。试验分析了LaNiO3表面结构和形貌,采用快速退火法在不同温度下对样品进行了热处理,发现在500℃即得到(100)取向、晶化完全的PZT薄膜,而性能测试表明,600℃下晶化的样品表现出非常优异的介电和铁电性能,电滞回线完全饱和而且形状对称,剩余极化和矫顽场分别为28.3μC/cm2和54.1 kV/cm。Pb（Zr0. 65 Ti0.45 ） O3 （PZT） and LaNiO3 （LNO） thin films have been deposited by pulsed laser deposition and RF magnetron sputtering on LaAlO3 substrates, respectively. Structural and surface morphologies of LNO layers, which were designed as bottom electrodes, were investigated. （100）-oriented PZT thin films were obtained at an annealing temperature as low as 500 ℃. The C-V and P-E curves measurements showed that samples annealed at 600 ℃ had good dielectric and ferroelectric properties. The Pr and Ec were 28.3 μC/cm^2 and 54.1 kV/cm. , respectively.

关 键 词：LANIO3 PZT 激光脉冲沉积 射频磁控溅射 退火 

分 类 号：TM22[一般工业技术—材料科学与工程]