PIN二极管子电路模型与微波限幅研究  

Study on PIN Diode Subcircuit Model and Microwave Limiting

作　　者：盛定仪[1] 谭吉春[1] 杨雨川[1] 杨耿[1] 

机构地区：[1]国防科技大学理学院,长沙410073

出　　处：《电子对抗》2007年第4期28-32,共5页Electronic Warfare

基　　金：武器装备预研基金项目（51421-KG0152）

摘　　要：利用一种改进的PIN二极管子电路模型，通过Pspice软件瞬态仿真研究了PIN限幅器的平顶泄漏和高频限幅性能。利用该子电路对新型SiC材料PIN二极管建模仿真，仿真结果表明新型二极管可以提高限幅器的性能。An improved PIN diode subcircuit model has been developed to study the PIN limiter with Pspice. The limiter＇ s flat leakage and microwave limiting performance have been particularly studied through Pspice simulation. The subcircuit is also used to model a new SiC PIN diode. Simulation resuits indicate that the limiter performance can be greatly, improved by using SiC PIN diodes.

关 键 词：PIN二极管 PSPICE仿真 限幅器 平顶泄漏 碳化硅 

分 类 号：TN312.4[电子电信—物理电子学]