SiN_x和SiN_x/SiO_x薄膜的荧光和红外吸收光谱研究  

Investigation on the photoluminescence and infrared absorption spectra of SiNx and SiNx/SiOx films

作　　者：纪红萱[1] 陈卫东[1] 徐明[1] 

机构地区：[1]四川师范大学物理与电子工程学院固体物理研究所低维结构物理实验室,成都610068

出　　处：《现代仪器》2007年第4期17-19,共3页Modern Instruments

摘　　要：采用射频磁控溅射法在Si(100)和含有SiOx缓冲层的Si(100)上制备SiNx薄膜。直接生长在Si(100)的SiNx薄膜几乎不发光;而SiNx/SiOx薄膜在650℃以上的高温热处理后有非常强的光致发光,当退火温度为800oC时发光强度达到最高。傅立叶红外吸收研究表明,直接生长在Si(100)的SiNx薄膜在退火后氧化程度略有增加;而SiNx/SiOx薄膜在高温热处理后氧化程度明显升高,但过高温度的退火会导致Si-N键显著减少。分析认为SiNx/SiOx薄膜的发光与Si-N键和Si-O键密切相关。The SiNx films with or without SiOx buffer were deposited on Si（100）. Very weak photoluminescence （PL） was observed for the SiNx film directly grown on Si（100）. While for the SiNx/SiOx film, strong visible PL is achieved with annealing temperature above 650 ℃, and optimal PL is obtained at 800℃. Fourier-Transform Infrared Transmission （FTIR） spectra reveal that strong PL is directly related to the content of the Si-N and Si-O bonds in the SiNx films. For the SiNx film directly grown on Si （100）, the oxidation increases little after high-temperature anneal. The introduction of SiOx buffer can significantly increase the oxidation, but too high temperature will cause the number of Si-N bond to strongly decrease.

关 键 词：SINX 薄膜 SIOX 光致发光 红外吸收 

分 类 号：TN304.24[电子电信—物理电子学]