双靶反应溅射Ti-B-N复合膜的研制  

Ti B N Composite Film Synthesized by Bi Targets Sputtering

作　　者：李戈扬[1,2] 王公耀 吴亮[1,2] 李鹏兴 张流强[1,2] 郑永铭 

机构地区：[1]上海交通大学金属基复合材料国家重点实验室 [2]中国工程物理研究院

出　　处：《上海交通大学学报》1997年第4期108-113,共6页Journal of Shanghai Jiaotong University

基　　金：中国工程物理研究院基金;华东分析测试中心资助

摘　　要：采用基片架旋转的多靶磁控溅射仪，通过六方氮化硼（ｈ－ＢＮ）和Ｔｉ靶反应溅射制备Ｔｉ－Ｂ－Ｎ复合薄膜，并用ＡＥＳ、ＸＲＤ和ＴＥＭ等方法研究了薄膜的微结构．结果表明，室温下沉积薄膜均呈非晶态，经过４００°Ｃ热处理薄膜晶化．基片加热为４００°Ｃ沉积的薄膜则已晶化，ＴＥＭ分析确定薄膜结构为ＴｉＮ结构．显微硬度表征发现，室温沉积Ｔｉ与ｈ－ＢＮ的原子数约为２∶１时的薄膜达到最高硬度ＨＫ２６００．Ti B N composite film is synthesized from Ti and h BN by use of multi targets magnetron sputtering system with rotative substrate.The microstructure of the film is characterized by AES,XRD and TEM.The results show that in the films deposited at ambient temperature there exists an amorphous phase,which crystallizes after annealing at 400°C,and the films deposited at the substrate temperature of 400 °C crystallize and mainly exist in TiN like structure.The highest hardness HK2600 is reached in the film deposited in TiN∶h BN=2∶1 at ambient temperature.

关 键 词：磁控溅射 双靶反应溅射 薄膜 钛-硼-氮复合膜 

分 类 号：O484.1[理学—固体物理] TG174.44[理学—物理]