激光化学气相沉积法制备TiO_2薄膜  

Preparation of Titanium Dioxide Films by Laser Chemical Vapor Deposition Method

作　　者：孙利平[1] 邓辉球[2] 刘晓芝[1] 佘彦武[1] 黄飞江[1] 

机构地区：[1]长沙大学电子与通信工程系,长沙410003 [2]湖南大学物理与微电子科学学院,长沙410082

出　　处：《激光与光电子学进展》2007年第8期57-61,共5页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(No.20403004)资助项目

摘　　要：利用激光化学气相沉积（LCVD）方法，以钛金属有机化合物为前驱体，以O2为反应气体，在激光功率PL为0～200W、基板预热温度为400～700℃的条件下，制备出了金红石型TiO2薄膜和金红石型与锐钛矿型混合TiO2薄膜。研究表明，激光功率和基板预热温度对所沉积的TiO2薄膜的物相组成、截面组织，表面形貌和薄膜生长速度均有着显著的影响。Rutile TiO2 films and rutile-anatase-mixed TiO2 films were prepared by Laser Chemical Vapor Deposition at laser power between 0 to 200 W and at substrate pre-heating temperature between 400 to 700℃ at the presence of O2. The results showed that the deposited films＇ crystalline phases, cross-sectional texture, surface morphology and deposition rates were mainly affected by laser power and substrate pre-heating temperature.

关 键 词：功能材料 二氧化钛 激光化学气相沉积 薄膜 

分 类 号：TB43[一般工业技术]