Synthesis and photoluminescence study on ZnO nano-particles  

作　　者：李祥 翟斐斐 刘颖 曹茂盛 王富耻 张西祥 

机构地区：[1]School of Material Sciences and Engineering, Beijing Institute of Technology, Beijing 100081, China [2]Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China

出　　处：《Chinese Physics B》2007年第9期2769-2772,共4页中国物理B（英文版）

摘　　要：A new technique, namely low pressure sputtering, has been developed to fabricate Zn nanoparticles, with a subsequent oxidation to synthesize ZnO nanoparticles in the ambient atmosphere at 500℃. The synthesized ZnO nanoparticle has a size of 6-8 nm with a preferred orientation of c-axis. The produced ZnO nanoparticles have a good UV photoluminescence （PL） emission energy of 3.349 eV with a significant enhancement of donor-acceptor pair emission located at 3.305 eV which implies a number of donor and acceptor bounded excitons existing in the synthesized ZnO nano particles. The near band edge PL emission of the fabricated ZnO is dominated by the bounded excitons at 10 K.A new technique, namely low pressure sputtering, has been developed to fabricate Zn nanoparticles, with a subsequent oxidation to synthesize ZnO nanoparticles in the ambient atmosphere at 500℃. The synthesized ZnO nanoparticle has a size of 6-8 nm with a preferred orientation of c-axis. The produced ZnO nanoparticles have a good UV photoluminescence （PL） emission energy of 3.349 eV with a significant enhancement of donor-acceptor pair emission located at 3.305 eV which implies a number of donor and acceptor bounded excitons existing in the synthesized ZnO nano particles. The near band edge PL emission of the fabricated ZnO is dominated by the bounded excitons at 10 K.

关 键 词：SPUTTERING ZnO nanoparticle PHOTOLUMINESCENCE 

分 类 号：O4[理学—物理]