基于薄膜SOI材料的GaN外延生长应力释放机制  

Stress reduction of GaN deposited on SOI substrates by MOCVD

作　　者：孙佳胤[1] 陈静[1] 王曦[1] 王建峰[2] 刘卫[2] 朱建军[2] 杨辉[2] 

机构地区：[1]中科院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]中科院半导体研究所,北京100083

出　　处：《功能材料与器件学报》2007年第4期367-370,共4页Journal of Functional Materials and Devices

基　　金：国家杰出青年基金(No.59925205);上海市政府国家照明工程计划(No.05d211006-3)

摘　　要：本文研究了SOI衬底上采用MOCVD方法生长GaN材料的应力释放机制。采用SIMOX工艺制备的具有薄膜顶层硅的SOI材料作为外延生长的衬底材料,采用MOSS在位检测系统以及拉曼测试作为GaN内部应力的表征手段。结果表明,SOI材料对硅基GaN异质外延中的晶格失配应力和热应力的释放都有显著作用。薄膜SOI材料通过顶层硅与外延层的界面滑移,将一部分晶格失配应力通过界面的滑移释放,并且通过柔性薄膜顶层硅自身的应力吸收作用,将一部分热失配应力转移到衬底,从而有效地降低了GaN外延层的张应力。The stress reduction in GaN epilayer deposited on SOI substrates by metal - organic chemical vapor deposition （MOCVD） was studied. The SOI wafers fabricated by separation by implanted oxygen （SIMOX） technology with thin top silicon layer were used as the substrate. The in - situ multiple beam optical stress sensor （MOSS） system and Raman spectra were used to characterize the stress in GaN epilayer. The results show that the SOI substrate can obvious reduce the lattice mismatch and thermal expansion coefficient mismatch stress in GaN epilayer on silicon. The thin film SOI substrates can partially relax the lattice mismatch stress by the floating in the epilayer and top silicon interface, and the thermal expansion coefficient mismatch stress can partially transfer to the SOI substrate by the compliant thin top silicon layer absorbing the tensile stress. So the SOI substrates are helpful for the stress reduction in the GaN epilayer.

关 键 词：绝缘体上的硅 氮化镓 金属有机物化学气相外延 降低应力 

分 类 号：TN304[电子电信—物理电子学]