溅射功率和气压对CdTe薄膜结晶性的影响  

The Influence of Sputtering Power and Pressure on CdTe Film's Crystallinity

作　　者：王国宁[1] 杨宇[1] 孔令德[2] 姬荣斌[2] 张曙[1] 

机构地区：[1]云南大学材料科学与工程系,昆明650091 [2]昆明物理研究所,昆明650223

出　　处：《硅酸盐通报》2007年第4期715-719,共5页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金(No.60567001)资助项目

摘　　要：用射频磁控溅射在普通玻璃衬底上制备CdTe薄膜。采用XRD对制备出的薄膜进行分析研究;并讨论了溅射气压、溅射功率对薄膜结晶性的影响。进一步研究表明:溅射气压低时溅射功率对CdTe薄膜结晶性的影响程度比溅射气压高时要大;溅射功率低时溅射气压对CdTe薄膜结晶性的影响程度比溅射功率高时要小。并对造成上述结果的机理进行了初步的理论探讨。CdTe thin films were prepared on glass substrates by radio-frequency magnetron sputtering. The films were characterized by X-ray diffraction. The influence of sputtering pressure and sputtering power on film＇s crystailinity were discussed. The results show that in low sputtering pressure, the influence of sputtering power on CdTe film＇s crystallinity is obvious, and in low sputtering power, the influence of sputtering pressure on CdTe film ＇s crystallinity is unconspicuous. The experimental mechanism was also investigated.

关 键 词：磁控溅射 CDTE薄膜 功率 气压 结晶性 

分 类 号：O484[理学—固体物理]