辐射对InSb霍尔器件电磁参数的影响  

Effects of irradiation on the electromagnetic parameters of InSb hall transducer

作　　者：王军[1] 杨渭[1] 

机构地区：[1]中国石油大学物理科学与技术学院,东营257061

出　　处：《辐射研究与辐射工艺学报》2007年第4期237-242,共6页Journal of Radiation Research and Radiation Processing

基　　金：教育部高等学校骨干教师项目(K001804A)资助

摘　　要：系统研究了低剂量率γ和β射线辐照对不同工作状态下的InSb霍尔器件输入电阻、输出电阻、磁电阻及霍尔灵敏度等电磁参数的影响,结果表明,γ和β粒子通过电离、位移效应与器件相互作用,导致器件的宏观电磁参数发生复杂变化。这些变化不因辐照停止而消失,反映了常温退火过程对辐射损伤的不可恢复性。恒流激励、无磁场作用时,所进行的辐照均使器件的输入电阻增加,并与辐照时间成正比。恒流激励、有确定磁场作用时,输入电阻、霍尔输出电压也因γ射线辐照而增加,但由于磁场的影响,增加量较小,且与辐照时间不成正比。无源、无磁场作用时,虽然输入、输出电阻因辐照而增加,但磁电阻和霍尔灵敏度却可能增加,也可能减小。所有这些结论对相应的辐射防护研究具有重要的参考价值。The effects of short-term irradiation with low dose rate γ and β rays on the electromagnetic parameters of InSb Hall transducer at different working states, such as input resistance, output resistance, magneto-resistance and Hall sensitivity etc, were systemically studied. The results indicated that the action of γ or β rays with ionization and displacement effect on Hall devices could result in the complicated changes of electromagnetic parameters. These changes didn＇t disappear rapidly after irradiation stopped. It reflected the radiation damage could not be restored through annealing courses at room temperature. When the devices were driven by constant current and not in any magnetic field, their input resistance linearly increased with irradiation time. When the devices were driven by constant current and in certain magnetic field, their input resistance and Hall voltage could increase along with γ irradiation, but the extent was less and the direct proportional relation with irradiation time didn＇t exist on account of the action of magnetic field. When the devices were not at working state and not in any magnetic field, their input and output resistance all increased with irradiation, but their magneto-resistance and Hall sensitivity might increase or decrease. All these results could give some helps for the relevant studies of radiation defense at some extent.

关 键 词：γ和β射线辐照 InSb霍尔器件 电磁参数 

分 类 号：TN382[电子电信—物理电子学] O472.5[理学—半导体物理]