Ce-Mn合金低温抛光CVD金刚石厚膜  

A Low-Temperature Polishing Technique for CVD Diamond Films by Ce-Mn Alloys

作　　者：孙玉静[1] 王树彬[1] 田莳[1] 史晓宇[1] 

机构地区：[1]北京航空航天大学材料科学与工程学院,北京100083

出　　处：《稀有金属材料与工程》2007年第A01期892-895,共4页Rare Metal Materials and Engineering

摘　　要：研究开发了一种低温、快速抛光化学气相沉积(CVD)金刚石厚膜的新技术,该技术是利用金刚石(C)和溶碳活性很高的稀土金属铈(Ce)和过渡金属锰(Mn)所熔炼出的Ce-Mn合金之间的热化学反应,在一定的工艺条件下对金刚石厚膜进行有效的抛光。详细讨论了合金组成对抛光速率和表面粗糙度(Ra)的影响,并且用扫描电镜和拉曼光谱对抛光后的膜表面进行了表征。结果表明:Mn含量较低的合金从抛光率上和抛光效果上考虑都更有利于获得良好抛光的金刚石厚膜,Ce-3%Mn原子比组成的合金,在660℃、抛光2h的实验条件下,使膜的粗糙度由10.8490μm降低到3.6826μm,抛光速率达到37.5μm/h。适量Mn的加入在降低抛光温度的同时仍然可以保证良好的抛光效果,优化了热化学抛光的工艺,而且该抛光技术不会破坏金刚石厚膜质量。A new technique for rapid polishing chemical-vapor-deposited （CVD） diamond films at low temperatures is developed. Using this technique, the diamond films were polished effectively under certain conditions via the thermochemical reaction between diamond （C） and Ce-Mn alloys melted with rare earth Cerium （Ce） and transitional metal Manganese （Mn）, which have high carbon solubility. The influence of alloy composition on the removal rate and surface roughness （Ra） of the diamond films has been discussed thoroughly, and the surface of polished films was characterized by scanning electronic microscopy （SEM） and Raman spectra. The results indicate the alloys with low Mn content are inclined to obtain well-polished diamond films, whether for removal rate or for polishing effect. After the film was polished at 600℃ for 2 h by Ce-3%Mn alloy, the Ra value of film is decreased from 10.8490 μm to 3.6826 μm and the polishing rate can reach 37.5 μm/h. The adding of proper Mn does not only lower the polishing temperature, but also obtain well-polished effect, so it optimizes the process of thermochemical polishing. Moreover, this technique cannot destroy the surface quality of diamond films.

关 键 词：CVD金刚石膜 Ce-Mn合金 抛光 表面粗糙度 

分 类 号：TB321[一般工业技术—材料科学与工程]