等离子辅助电子束蒸发La_2O_3薄膜的制备  

Preparation of La_2O_3 Films by Ion Beam Assistant E-Beam Evaporation

作　　者：杨陈[1] 樊慧庆[1] 焦岗成[1] 惠迎雪[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《稀有金属材料与工程》2007年第A01期928-930,共3页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(50672075);教育部博士点基金(20050699011);新世纪人才计划(NCET-05-0871);西安市科技攻关计划(GG05015;GG06023)

摘　　要：采用等离子辅助电子束蒸发,在Si(100)衬底上沉积La2O3薄膜。随后对非晶的沉积态薄膜在750℃和900℃分别退火1h。实验结果表明,采用等离子辅助电子束蒸发,可以获得非晶态的La2O3薄膜;经750℃热处理后,薄膜部分晶化;经900℃热处理后,薄膜显著晶化,晶粒尺寸明显增大,并沿(002)方向择优取向。对薄膜I-V特性的测量结果表明,沉积态薄膜具有较小的漏电流,但随着热处理温度升高,薄膜晶化程度提高,薄膜漏电流逐渐增大;对薄膜透过率的测量结果表明,单面抛光的Si衬底上沉积La2O3薄膜,在近红外范围内有明显的增透效果,最大可达20%左右。La2O3 films were prepared on Si （100） substrates by ion beam assistant thermal oxidative electron beam evaporation. High purity La2O3 （99.99%） was used as raw materials. La2O3 film had been deposited at 200℃. La2O3 films were then annealed at 750℃ and 900℃ for lh. The microstructure, optical property and electrical property of La2O3 films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, spectrophotometer and Ⅰ-Ⅴ testing. La2O3 films are well crystallized in hexagonal structure. The transmittance of La2O3/Si multi-structure is increased by 20% at wavelength of 2000nm; on the other hand, these La2O3 films exhibits excellent Ⅰ- Ⅴ characteristic.

关 键 词：La2O3薄膜 等离子辅助电子束蒸发 薄膜结构 Ⅰ-Ⅴ矿特性 透过率 

分 类 号：O484.1[理学—固体物理]