氧化铁镍薄膜的制备与表征  

Preparation and Characterization of Iron-doped Nickel Oxide Thin films

作　　者：黄金昭[1] 徐征[2] 李海玲[3] 亢国虎[3] 王文静[3] 

机构地区：[1]北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室,北京100044 [2]天津大学博士后流动站,天津300072 [3]北京市太阳能研究所,北京100083

出　　处：《光电子．激光》2007年第4期392-395,共4页Journal of Optoelectronics·Laser

基　　金：国家重点基础研究发展规划"973"资助项目(2003CB214501);北京交通大学优秀博士生科技创新基金资助项目(48010)

摘　　要：首先提出射频反应磁控溅射中薄膜沉积速率同O2流量和溅射功率关系的理论计算模型;其次根据这一理论计算模型,在O2/Ar气氛中,利用射频反应磁控溅射制备氧化铁镍薄膜;最后分别采用台阶仪、X射线衍射(XRD)、X射线光电子能谱(XPS)、电子扫描镜(SEM)和电化学工作站对薄膜进行了表征,并分析了在制备过程中O2含量、工作压强和溅射功率对薄膜的沉积速率、结构、组分和表面形貌的影响。实验验证了所提出的理论计算模型以及Ni3+的存在;得到了膜厚与晶型以及工作压强与形貌的关系;电化学测试结果为:在电流密度为8 mA/cm2时的过电势为284 mV。The theoretical calculation model of relation between film deposition rate and flux of oxygen and RF power about RF reactive magnetron sputtering was advanced; Then,the films were prepared by RF reactive magnetron sputtering in an oxygen and argon atmosphere based on the theoretical calculation model and the requirement of hydrogen production from solar energy;Finally, the films were characterized by stylus surface-roughness detector, XRD, XPS and SEM and the effects of sputtering parameters （oxygen content, working pressure, RF power） on the deposition rate, structure, composition and surface morphology were analyzed. The theoretical calculation model and the existence of Ni^3＋ were certified in experi- ments. The relations of structure and thickness fo films,working pressure and surface morphology were obtained. The overpotential is 284 mV at 8 mA/cm^2.

关 键 词：氧化铁镍 反应磁控溅射 

分 类 号：O484.1[理学—固体物理]