ITO薄膜制备及RTA处理对发光器件特性的影响  

Fabrication of ITO Film and Influence to Electroluminescent Devices Through RTA Disposing

作　　者：袁广才[1] 徐征[1] 张福俊[1] 王勇[1] 许洪华[1] 

机构地区：[1]北京交通大学光电子技术研究所

出　　处：《光电子．激光》2007年第8期903-906,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(10374001;60576016);国家重点基础研究发展计划资助项目(2003CB314707);国家自然科学基金重点资助项目(10434030)

摘　　要：采用射频反应磁控溅射生长铟锡氧化物(ITO)薄膜,通过X射线衍射(XRD)、透射光谱、四探针法及原子力显微镜(AFM)研究了生长条件、快速热退火(RTA)温度等对薄膜的晶化、透过率、电导率以及表面形貌的影响。以ITO/NPB/AlQ/Al结构的器件为例,讨论了不同的制备条件下ITO薄膜的表面效应对电致发光(EL)的影响,通过EL光谱表征发现,对ITO退火处理后,器件的相对发光强度明显增加,衰减速度减慢,器件的EL光谱有明显的变化。通过进一步分析认为,这是由于ITO薄膜表面的变化引起功函数的改变,从而引起电场重新分布造成的。Indium tin oxide（ITO） film was deposited by radio frequency （RF） reactive magnetron sputtering method. The characteristics of ITO film were studied by changing depositing ambience and the rapid thermal annealing（RTA） tempera- ture. The transmittance, surface morphology, and roughness are analyzed by optical transmission spectrum, four probe method,AFM and XRD. The electroluminescent properties of devices weas discussed when the film of ITO was deposited under different conditions. It was also found that after the ITO was annealed, the luminescent intensity was obviously enhaned, the attenuation velocity was lowered and the electroluminescent peak changed. Through further analysis,it was concluded that different surfaces of ITO films might lead to the change of work function and the distributing of electric field in the device, as a result, the electroluminescent properties of the device was changed too.

关 键 词：射频反应磁控溅射 ITO薄膜 快速热退火(RTA) 电致发光(EL) 

分 类 号：TQ050.4[化学工程]