金刚石/硅复合膜的导热特性研究  

Thermal Conductivity of Diamond/Si Composite Films

作　　者：吴小国[1] 熊瑛[1] 杨保和[1] 李翠平[1] 孙大智[1] 李晓伟[1] 

机构地区：[1]天津理工大学光电信息与光电子工程系和天津市薄膜电子与通信器件重点实验室,天津300191

出　　处：《光电子．激光》2007年第8期963-965,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60276001);天津市发展计划项目(05YFJZJC00400);天津市自然基金(YFJMJC05300);天津市高等学校科技发展基金项目(20050519)

摘　　要：用金刚石粉,用不同时间在两片镜面抛光的(111)硅基片上分别打磨。两片硅基片打磨后都仍保持镜面特征。采用微波等离子体化学气相沉积系统,利用氢气、甲烷和氧气为前驱气体,在同样参数条件下,在基片上制备了直径5cm的金刚石薄膜。用扫描电镜和X射线衍射分析两片薄膜结构。分析结果表明其表面形貌基本相同都为(111)择优取向的金刚石薄膜;但X射线衍射分析表明打磨时间较长的薄膜中含有一定量在非晶成分。用热导测试仪测试两薄膜和硅基片的热导率约为:241.7W/mK,192.9W/mK和169.3W/mK。结合扫描电镜和X射线衍射分析结果我们讨论了基底处理对金刚石/硅复合膜的导热特性的影响。Two （111） mirror Si substrates have been scraped with diamond powder and different time length. Both are still mirror polishing after scraping. The the diamond film with 5 crn diameter is prepared by microwave plasma chemical deposition system with same growth parameters and same mixture gases of He, CH4, and O2. Diamond films morphology is analyzed by SEM and XRD spectra. Both show the similar crystal structure with the main diffusion peak（111） ,and XRD shows that the film grown at long time scraping substrate has amount of amorphous material. The thermal conductivity of the two diamond film and Si substrate are 241. 7 W/mK, 192. 9 W/mK and 169. 3 W/mK, respectively. The effects of substrates scraped on thermal conductivities are discussed in detail.

关 键 词：金刚石 薄膜 热导率 

分 类 号：TB383[一般工业技术—材料科学与工程]