n-GaN/Ti/Al/Ni/Au欧姆接触温度特性及微结构研究  

Research on Thermal,Microstructural Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN

作　　者：张跃宗[1] 冯士维[1] 张弓长[1] 王承栋[1] 

机构地区：[1]北京工业大学电控学院可靠性物理实验室,北京100022

出　　处：《微纳电子技术》2007年第7期72-75,共4页Micronanoelectronic Technology

基　　金：国家863项目(2006AA03A112)

摘　　要：主要对n-GaN/Ti/Al/Ni/Au欧姆接触在高温下(500℃)的特性进行了研究,发现在所测温度范围内,接触电阻率随测量温度的升高呈现出增加的趋势,接触开始退化。同时分析研究了在不同高温、不同时间范围内(24h)欧姆接触高温存储前后的变化,分析发现对于温度不高于500℃、在24h内存储温度升高,接触电阻率增加。当样品被施加500℃,24h的热应力后,其接触电阻率表现出不可恢复性增加。通过X射线衍射能谱分析了高温前后欧姆接触内部结构的变化机理,经过500℃的高温后,Ti层原子穿过Al层与Ni层原子发生固相反应。The characteristics of n-GaN/Ti/Al/Ni/Au ohmic contacts under 500 ℃ was studied. The contacts resistivity show the trend of increasing with the measurement temperature in the range of 500 ℃ and the contacts begin to degenerate. The change of ohmic contacts were analyzed after and before high temperature stored at the different temperature and time. The contact resistivity increases with storage temperature, and it shows unrecoverable characteristic after the samples are forced thermal stress 500 ℃ 24 h. According to the X-rays diffraction, the mechanism was researched before and after high temperature, the Ti layer atoms penetrated the Al layer into the Ni layer.

关 键 词：欧姆接触 接触电阻率 X射线衍射能谱 

分 类 号：TN405[电子电信—微电子学与固体电子学]