基于InSb-In薄膜磁阻元件电流传感器的应用  被引量:4

Application of MRCS Based on InSb-In

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作  者:陈科球[1] 黄钊洪[1] 

机构地区:[1]华南师范大学信息光电子科技学院光子信息技术实验室,广州510006

出  处:《微纳电子技术》2007年第7期200-202,共3页Micronanoelectronic Technology

摘  要:介绍了一种用InSb-In共晶体薄膜磁阻元件制成的电流传感器(MRCS)。为了检测微弱电流,此种电流传感器利用同时改变两个InSb-In磁阻元件阻值的途径来实现这一目的,设计了一种能较大幅度增大其输出电压的信号处理电路。当处理电路的电压增益为50~10000倍、,待测的50Hz交流电流在50mA^12A时,输出电压在0.3~3.5V变化,并且两者之间有比较好的线性关系,标准偏差小于0.02,完全能满足工业上对电流的监测作用,从而保护因异常情况停止运转的马达。A current sensor (MRCS) made from InSb-In eutectic film magneto resistor was introduced. In order to detect the small current signal, this kind of electric current sensor changed the resistance of two InSb-In magneto resistance elements simultaneously,and a signal processing circuit which can enlarge its output voltage greatly was designed. When processing circuit voltage gain is 50-10000 times,and the 50 Hz AC which will be detected changes between 50 mA and 12 A,the output voltage is about 0. 3-3. 5 V. The current and the output voltage are in good linear relationship and the standard deviation is under 0.02, so it can be used to control the current, then protect the abnormal running motor.

关 键 词:锑化铟 磁阻元件 磁阻效应 电流传感器 

分 类 号:TP212.9[自动化与计算机技术—检测技术与自动化装置]

 

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