非晶硅薄膜晶体管室温红外探测器的优化设计  

Optimization Design of Uncooled Amorphous Silicon Thin Film Transistor Infrared Detector

作　　者：刘兴明[1] 方华军[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《微纳电子技术》2007年第7期219-221,共3页Micronanoelectronic Technology

摘　　要：介绍了基于非晶硅薄膜晶体管的室温红外探测器的基本特征及性能指标,对晶体管宽长比对探测器性能的影响进行了理论分析,分析表明,提高晶体管的宽长比可以改善探测器的探测率。为了克服传统微桥结构室温红外探测器成品率低的不足,提出了一种新的热绝缘材料,并将该材料应用到了非制冷红外探测器中,实际制备了探测器单元,对该材料的热绝缘能力进行了验证。The basic characteristics and parameters of uncooled amorphous silicon thin film transistor were introduced, and the influence of aspect ratio on performance was analyzed. According to the results, the performance can be improved by increasing the aspect ratio of the transistor. New type of thermal isolation material（Polyimide-PI） was presented to overcome the disadvan- tage of low yield of traditional microbridge thermal isolation structure. New uncooled infrared detector based on the thermal isolation material and amorphous transistor was fabricated to verify the thermal isolation capability of the material.

关 键 词：非晶硅薄膜晶体管 非制冷红外探测器 电流温度系数 插指结构 

分 类 号：TN215[电子电信—物理电子学]