GaAs基共振隧穿微加速度计的研究  

Research of a Micro Accelerometer Based on GaAs Resonant Tunneling Structure

作　　者：胡杰[1] 薛晨阳[1] 张文栋[1] 熊继军[1] 张斌珍[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,太原030051

出　　处：《微纳电子技术》2007年第7期235-237,共3页Micronanoelectronic Technology

摘　　要：研究了一种新型的GaAs基压阻式共振隧穿微加速度计结构。该微加速度计的压敏元件采用AlAs/In0.1Ga0.9As双势垒共振隧穿纳米薄膜结构。加速度计的压敏元件和悬臂梁的加工分别利用空气桥工艺和控制孔工艺。对加工出来的加速度计结构进行振动台实验,初步测得传感器的灵敏度为7.6mV/g,线性度为0.16%。A novel GaAs piezoresistive aecelerometer based on resonant tunneling structure was presented. The sensitive unit was made of AlAs/In0 1Ga0.9As double barriers resonant tunneling thin film. The sensing unit and cantilever beams were successfully fabricated by double air bridg- es process and control hole process separately. The sensitivity of 7. 6 mV/g and the linearty of 0. 16% were measured in the vibration experiment.

关 键 词：加速度计 共振隧穿薄膜 双空气桥工艺 控制孔工艺 

分 类 号：TH824.4[机械工程—仪器科学与技术]