悬浮栅结构ISFET动态特性的HSPICE仿真  

Dynamic Behavior Simulation of Floating-Gate Structure ISFETs with HSPICE

作　　者：屈岚[1] 汪祖民[1] 韩泾鸿[1] 任振兴[1] 夏善红[1] 

机构地区：[1]中国科学院电子学研究所传感技术国家重点实验室

出　　处：《微纳电子技术》2007年第7期363-366,共4页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(90307014)

摘　　要：通过对ISFET敏感机理的理论分析,根据表面基模型,建立了悬浮栅结构ISFET器件的HSPICE动态行为模型,对ISFET器件的动态特性进行仿真得到时间响应曲线,并探讨了薄膜等效电阻、薄膜等效电容、互连线寄生电容和寄生电阻等因素与动态特性中延迟时间和迟滞等不理想因素的关系,为ISFET/REFET差分结构集成传感器芯片设计提供理论指导。A dynamic HSPICE behavioral macromodel for the floating-gate ISFET was founded based on the site-binding model. The dynamic response of the ISFET （ion sensitive field effect transistors） was simulated. The influences of sensitive membrane resistance, membrane capaci- tance, line stray capacitance and line parasitic resistance on dynamic characteristics of ISFET were researched,such as response delay and hysteresis. The simulation can help to improve the characteristics of the integrated differential ISFET/REFET sensor.

关 键 词：离子敏场效应管 HSPICE 动态特性 悬浮栅 

分 类 号：TN386[电子电信—物理电子学] TN402