正切平方势与量子阱的带内跃迁和带间跃迁  

Tangent-squared Potential and Level Transition in Quantum Well

作　　者：胡必武[1] 罗诗裕[1] 邵明珠[1] 

机构地区：[1]东莞理工学院,广东东莞523106

出　　处：《半导体光电》2007年第4期516-519,共4页Semiconductor Optoelectronics

摘　　要：引入了新的正切平方势来描述量子阱中的电子和空穴运动行为。在量子力学框架内,把粒子的Schr dinger方程化为了超几何方程,并用系统参数和超几何函数严格地求解了粒子的本征值和本征函数,并以Ga1-xAlxAs/GaAs/Ga1-xAlxAs量子阱为例计算了电子和空穴的带内跃迁和带间跃迁。结果表明,电子和空穴在量子阱中的能量是量子化的,而阱内的能级数目和跃迁能量与系统参数有关。于是,可望通过对势阱参数的控制来得到不同光电特性的量子阱材料。The new interaction potential with tangent-squared form was led to describe the motion behaviours of the electrons and the holes in the quantum well. In the framework of quantum mechanics,Schroedinger equation to describe the motion behaviours was converted into the hypergeometric equation. The eigenvalue and the eigenfunction of the system were calculated strictly by the system parameters and hypergeometric functions. The transition in the bands and interbands of electrons and holes were calculated by taking Ga1-x AlxAs/GaAs/Ga1-x Alx As quantum well as an example. Results show that the energy of the electrons and holes is quantization in the quantum well, and level number and transition energy are related to the system parameters of the well. Thus, the material with the various photo-electrical properties might be obtained by controlling parameters of the well.

关 键 词：超晶格 量子阱 超几何方程 单粒子能级 

分 类 号：O471.5[理学—半导体物理]