n型AlAs/GaAlAs量子阱子带间正入射吸收跃迁振子强度  

OSCILLATOR STRENGTH OF INTERSUBBAND TRANSITION IN N TYPE AlAs/GaAlAs QUANTUM WELL FOR THE NORMAL INCIDENT ABSORPTION

作　　者：徐文兰[1,2] 傅英 M.Wilander 

机构地区：[1]中国科学院上海技术物理研究所 [2]中国科学院红外物理国家重点实验室

出　　处：《红外与毫米波学报》1997年第2期86-92,共7页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金

摘　　要：对ｎ型电子有效质量各向异性半导体量子阱，给出了子带间正入射吸收的振子强度解析表达式．这种子带间的跃迁有束缚基态到束缚的激发态的，有束缚基态到扩展的激发态的．以ＡｌＡｓ／ＧａＡｌＡｓ为例研究了量子阱生长方向。For the n type semiconductor quantum well with anisotropic electron effective mass, the analytical expressions of oscillator strength of intersubband transition including both bound to bound and bound to extended excited states for the normal incident radiation were given. Taking the AlAs/Ga 1- x Al x As as an example, the influences of the growth direction of the quantum well and the well width on the absorption wavelength and the oscillator strength were investigated.

关 键 词：量子阱 红外材料 正入射吸收 振动强度 半导体 

分 类 号：TN213[电子电信—物理电子学] O471.1[理学—半导体物理]