溶胶-凝胶法制备Bi_2O_3-ZnO-Nb_2O_5薄膜及GaN MIS结构C-V特性  

Bi_2O_3-ZnO-Nb_2O_5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure

作　　者：舒斌[1] 张鹤鸣[1] 王青[1] 黄大鹏[1] 宣荣喜[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《Journal of Semiconductors》2007年第9期1406-1410,共5页半导体学报（英文版）

基　　金：武器装备预研基金资助项目(批准号:51408061104DZ01)~~

摘　　要：采用溶胶-凝胶法制备出高介电常数的Bi2O3-ZnO-Nb2O5(BZN)薄膜.总结出适合作为GaN金属-绝缘层-半导体场效应晶体管(MISFET)栅介质的BZN薄膜的原料配比、烧结温度和保温时间等工艺参数,解决了原料溶解、粘稠度、浸润度等工艺问题.同时,结合半导体工艺制造出以BZN薄膜为绝缘介质的GaNMIS结构,通过测量到的高频C-V特性曲线,得到薄膜的相对介电常数为91,MIS结构的强反型电压为-3.4V,平带电压为-1.9V.A Bi2O3-ZnO-Nb2O5 （BZN） film with a high dielectric constant,which can be.used as a gate medium in GaN metal-insulator-semiconductor field effect transistors （MISFETs）, was fabricated by the sol-gel technique. Process parameters such as raw material proportioning,sinter temperature, and heat preservation time were obtained. The problems of the dissolvability, viscosity, and soakage of the raw material were also solved. A GaN MIS structure with the BZN film was also fabricated;and from the measured C-V curve,εr of the BZN film was 91 ,and the reverse voltage and CFB of this MIS structure were - 3.4 and - 1.9V,respectively.

关 键 词：溶胶-凝胶 铋锌铌薄膜 金属-绝缘层-半导体结构 电容-电压曲线 

分 类 号：TN23[电子电信—物理电子学]