高密度与低电阻率ZnO:Al靶材的制备及缺陷分析  

Preparation of higher dense and low resistive ZnO:Al target and analysis of defect

作　　者：许积文[1] 王华[1] 任明放[1] 杨玲[1] 

机构地区：[1]桂林电子科技大学信息材料科学与工程系,广西桂林541004

出　　处：《功能材料》2007年第9期1457-1459,1463,共4页Journal of Functional Materials

基　　金：广西高校百名中青年学科带头人资助计划项目(RC20060809014)

摘　　要：以纳米量级的ZnO和Al2O3粉体为原料,通过湿式球磨得到了混合粉体,再经过模压成型与常压烧结工艺即可获得致密度超过95%的ZnO∶Al陶瓷靶材,其电阻率可达10-2Ω.cm数量级。高致密度的原因在于纳米粉体具有大的比表面积和粒子数,烧结均匀,气孔较少。低电阻率在于Al3+对Zn2+替代产生的自由电子。同时对靶材中的黑点进行了分析,EDS显示其不仅存在N元素,而且Al含量与致密度比正常区域低,其原因与粉体颗粒的均匀性有关。Nanoscale ZnO and Alz 03 powder were used as raw matertal, the Al-aopead ZnO target wtm hign relatire density （R. D〉95%） was obtained by pressureless sintering after alumina milled in alcohol. The lowest resistivity is of the order 10^-2Ω·cm. High density is due to extremely high surface area of nanoscale powder, uniform sintering of green compact and fewer pore. The low resistivity is attributed to increased electrons produced by Al^a＋ substitution for Zn^2＋. The dark spot in target contains N element, and the Al content is less than the normal zone. The impurity roots in the unhomogeneity of mixed powder.

关 键 词：ZAO靶材 纳米粉体 致密度 电阻率 黑点 

分 类 号：TB383[一般工业技术—材料科学与工程]