AOTF器件制作中光刻工艺的研究  

Study on Photolithography of AOTF

作　　者：池晓金[1] 乐孜纯[2] 张明[2] 魏坚洲[1] 童骏[1] 

机构地区：[1]浙江工业大学浙江省光纤通信重点实验室,浙江杭州310014 [2]浙江工业大学理学院,浙江杭州310014

出　　处：《光电技术应用》2007年第4期77-80,共4页Electro-Optic Technology Application

基　　金：浙江省科技计划重点项目资助(2005C21010)

摘　　要：对在LiN_bO_3晶体基片上制作声光可调谐滤波器(AOTF)光刻工艺参数的确定进行了研究.着重研究了匀胶机转速、曝光时间和显影时间对光刻效果的影响.通过大量的实验得到了较好的光刻工艺参数,即在低速2850/8(rpm/s)和高速6000/ 25(rpm/s)的转速下取得较均匀的光刻胶后,在90℃下前烘30 min,再经过10 s曝光和10 s显影,最后再经过30 min的100℃后烘,可得到较好的光刻图样.经过显微镜观察,光刻好的图形表面洁净,侧壁陡直光滑,图形质量较好.The photolithography parameters of Acoustic-Optic Tunable Filter （AOTF） using the LiN6O3 are studied. The rotation rate of spin coater, exposure time and develop time which are effective on the photolithography are mainly discussed. After many experiments, we got better photolithography parameters as follow： the rotation rate of spin coater is 2850/8（rpm/s） in low speed and 6000/25（rpm/s） in high speed. The prebake temperature is 90 ℃and postbake temperature is 100℃. Both of their times are 30 minutes. The exposure and develop time are 10 seconds. With these parameters, better photolithography graphics are obtained. Observing through microscope, the photolithography graphics is lustration with smooth side edge.

关 键 词：AOTF 光刻工艺 匀胶 曝光 显影 

分 类 号：TN205[电子电信—物理电子学]