低温ITO薄膜制备及其在TOLED中的应用  

Fabrication of Low-temperature ITO Thin Film and Its Application in TOLEDs

作　　者：林慧[1] 蒋亚东[1] 于军胜[1] 李军建[1] 王军[1] 邓建芳[1] 

机构地区：[1]电子科技大学光电信息学院,电子薄膜与集成器件国家重点实验室,成都四川610054

出　　处：《光电子．激光》2007年第9期1068-1070,共3页Journal of Optoelectronics·Laser

基　　金：电子科技大学“中青年学术带头人”项目的资助.

摘　　要：通过在直流磁控溅射过程中加入微量水蒸气的方法,在低于60℃温度条件下制备了具有优良光电性能的透明导电ITO薄膜,并探讨了溅射功率、基板温度对ITO薄膜光电性能的影响。利用制得的ITO薄膜作电极,制作了结构为ITO/CuPc/NPB/Alq3/BCP/Mg∶Ag/ITO的透明有机电致发光器件(TOLEDs),结果表明,器件的平均透过率达到45%;在驱动电压15V的条件下,发光亮度达到了3000cd/m2。Indiurm-tin oxide（ITO） ultrathin films with high optical and electrical performance were fabricated by direct current （DC） magnetron sputtering method with the assistance of tiny H2O vapor during the deposition process below 60 ℃, The effects of the sputtering power and substrate temperature on the optoelectronic property of ITO thin films were investigated, Transparent organic light-emitting diodes（TOLEDs） with the structure of ITO/CuPc/NPB/Alq3/BCP/Mg ： Ag/ITO were fabricated by using the obtained IT（） thin film as electrode. Results show that the average transmission of TOLEIT）s in visible light range is 45% ,and the maximum luminance of 3 000 cd/m^2 is achieved at 15 V.

关 键 词：ITO薄膜 直流磁控溅射 透明有机电致发光器件(TOLEDs) 光电性能 

分 类 号：O484[理学—固体物理]