利用LBIC技术对InGaAs平面结器件结区特性的研究  

Study on Photoactive Area of Planar InGaAs Linear Detector by LBIC Technique

作　　者：张可锋[1] 吴小利[1] 唐恒敬[1] 乔辉[1] 贾嘉[1] 李雪[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室

出　　处：《激光与红外》2007年第B09期947-950,共4页Laser & Infrared

基　　金：国家自然科学基金重点项目(No.50632060)

摘　　要：室温铟镓砷(InGaAs)焦平面技术在航天工业上的应用越来越广泛,铟镓砷(InGaAs)焦平面列阵中探测器的尺寸正不断减小,这使得常规工艺形成的光伏探测器,其有效光敏元面积扩大的问题越来越突出。本文利用激光诱导电流检测(LB IC)系统测试了平面结InGaAs(P-I-N)探测器芯片的光敏元,证实了有效光敏面扩大的存在。从实验结果看,掺杂离子的横向扩散和结区的侧向收集效应,是平面工艺形成的光伏器件光敏元面积扩大的主要因素,并利用得到的实验数据拟合求出了器件少子的扩散长度。Short wavelength Infrared （SWIR） focal plane arrays （FPAs） working at room temperature have many important military and cosmonaufic applications. The dimensions of detectors in FPAs have gradually been reduced. The problem of the increase of the effective photoactive area in photovoltaic detectors by conventional technology become more obvious. Planar InGaAs （P-I-N） linear detector at 300K using laser beam induced currernt （LBIC） was measured. From the results, the increase of the effective optically sensitive area exits. The landscape orientation diffusion of the dopant and the side-collecting of minority carriers are the two main reasons for the increase of the effective photoactive area for the planar InGaAs linear detector. It is important to the research and design of linear and two-dimensional InGaAs focal plane arrays （FPAs）.

关 键 词：LBIC技术 INGAAS 探测器 光敏感区 

分 类 号：TN215[电子电信—物理电子学]