湿法化学腐蚀在GaN基材料中的应用  

Application of Wet Chemical Etching in GaN-based Materials

作　　者：陈杰[1] 许金通[1] 王玲[1] 李向阳[1] 张燕[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083

出　　处：《激光与红外》2007年第B09期961-963,共3页Laser & Infrared

摘　　要：文中计算了A lGaN材料在不同温度KOH水溶液中的湿法腐蚀速率,并研究了湿法化学腐蚀GaN基材料对消除干法刻蚀所引入损伤的作用。为了对比湿法化学腐蚀消除干法刻蚀损伤的效果,分别利用扫描电子显微镜(SEM)、原子力显微镜(AFM)和俄歇电子能谱(AES)对比Ar+干法刻蚀后经湿法化学腐蚀处理和未经处理的表面形貌及组分,并制作了单元可见盲器件,测试其反向漏电流,发现在干法刻蚀后引入湿法化学腐蚀工艺可使器件的反向漏电流得到较大程度的减小。In this paper, the wet chemical etching rate of A1GaN in different temperature of KOH aqueous solution was calculated and discussed. It was also found that wet chemical etching after dry etching can effectively eliminate the damage introduced by dry etching process and improve the device performance. The surface morphologies and the compositions of both sets were observed by scanning electron microscopic （ SEM）, atomic force microscopic （AFM） and Auger electron spectroscopy （AES）. The leakage currents of visible-blind devices were compared. It is obvious that dry etching damages and devices leakage current are reduced after wet chemical etching.

关 键 词：湿法化学腐蚀 GaN基 干法刻蚀损伤 反向漏电流 

分 类 号：TN23[电子电信—物理电子学] TN305.2