纳米晶Ge颗料镶嵌SiO_2复合膜的多峰光致发光及其机理  

Multiple Peak Photoluminescence Spectra and Light-Emitting Mechanism for Composite Films of Ge Nanocrystals Embedded in Glassy SiO_2 Matrices

作　　者：许怀哲[1] 朱美芳[1] 侯伯元[1] 陈光华[2] 马智训 陈培毅[4] 

机构地区：[1]中国科学技术大学研究生院物理部 [2]北京工业大学应用物理系,北京100022,兰州大学物理系,兰州730000 [3]兰州大学物理系 [4]清华大学微电子研究所

出　　处：《Journal of Semiconductors》1997年第6期417-423,共7页半导体学报（英文版）

基　　金：国家博士后科学基金;中国科学技术大学研究生院院长基金;半导体超晶格国家重点实验室的部分资助

摘　　要：用射频（RF）共溅射和热退火处理的方法制备了纳米锗颗粒镶嵌SiO2复合薄膜（nc－Ge／SiO2），观察到了多峰的光致发光现象，发现随着激发光波长的增长，多峰发光谱的最强峰向低能方向移动，但是各子峰的位置不发生改变，而且不同样品的发光谱子峰位置非常一致．X射线光电子能谱（XPS）分析显示膜中不存在纳米晶硅成分，表明多峰光致发光与镶嵌在SiO2复合中的纳米锗颗粒有关。Composite films of Ge nanocrystals embedded in glassy SiO2 matrices were formed on St (100) wafer by radio-frequency (RF) cosputtering technique and then annealed at 600℃ for 30min in vacuum. Multiple peak structure in photoluminescence spectra are observed at room temperature, and the variation of the photoluminescence spectra with excitation wavelength has been systematically measured at room temperature. It is found that the maximum of the multiple peak spectra shifts to lower energies with increasing the excitation wavelength, but the peak energies remain the same for all the excitation wavelength and for all the samples, the peak energes are also found to be coincide well with the photoluminescence peak energies previous reported. After XPS analysis, the mechanism of the multiple peak photoluminescence has been discussed in comparision with porous silicon, we have concluded that the multiple peak photoluminescence from nc-Ge/SiO2 composite films originates from the SiO2 or SiOx films that enclosed the Ge nanocrystals, rather than from the Ge nanocrystals contained in the composite films.

关 键 词：纳米锗颗粒 二氧化硅 复合薄膜 多峰光致发光 

分 类 号：TN304.11[电子电信—物理电子学] TN304.055