半导体微腔物理及其应用  

Semiconductor Microcavity: Physics and Its Applications

作　　者：郑厚植[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1997年第7期481-491,共11页半导体学报（英文版）

摘　　要：半导体微腔物理是半导体低维结构物理与量子光学的交叉前沿领域．本文就半导体微腔中自发辐射增强效应，腔极化激元与Rabi分裂，腔极化激元的色散关系，稳态与瞬态的光学性质，三维受限微腔和微腔激光器特性等作一概要介绍，力图重点地从物理角度来阐明这些物理现象．Physics of semiconductor microcavity is a new, cross-discipline frontier between low-dimensional semiconductor physics and quantum optics. The present review aims at giving a broad but brief introduction on main physical phenomena: enhanced spontaneous emission, Rabi splitting, dispersion of cavity polariton t static and transient optical properties, three-dimensionally confined cavities and cavity laser et al., observed recently in various semiconductor microcavities with the emphasis on their underlying physics.

关 键 词：半导体微腔物理 半导体低维结构 半导体量子理论 

分 类 号：O471.1[理学—半导体物理]