无机介质集成薄膜电容的制备研究  

Investigation of inorganic integrated film capacitor fabrication

作　　者：徐文彬[1] 王德苗[1] 

机构地区：[1]浙江大学信电系,浙江杭州310027

出　　处：《电子元件与材料》2007年第9期7-9,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(50172042)

摘　　要：以Cr/Ag/Cr金属膜系为电极,电子束蒸发镁橄榄石(2MgO·SiO2)膜为绝缘介质,在陶瓷基片(表面较粗糙)上制备了MIM结构无机集成薄膜电容。光学显微镜和扫描电镜分析显示,电容的绝缘强度和介电性能主要取决于介质膜致密程度。沉积后适当的热处理有助于改善电容性能,但过度的热处理却可能导致由晶化和扩散引起的负面作用。所得电容击穿场强达到了107V/m以上,5MHz频率tanδ为0.01。MIM structure inorganic integrated film capacitors were fabricated on ceramic substrates （with rough surfaces）, the Cr/Ag/Cr films series were chosed as electrodes, and the evaporated 2MgO · SiO2 films as insulating dielectric. The micrographs and SEM results show that the capacitors＇ properties depends mainly on the dielectric films＇ compactness. A proper post deposition thermal treatment is found helpful to improve the films＂ properties. However, excessive thermal treatment may lead to a negative effect because of crystallization and diffusion. The film capacitors obtained have achieved a breakdown field of more than 10^7 V/m, and tan δ is 0.01at 5 MHz.

关 键 词：电子技术 薄膜电容 绝缘强度 介电性能 

分 类 号：TM53[电气工程—电器]