不同设计参数MOS器件的γ射线总剂量效应  

γ-Radiation Total Dose Effects of Different Sized MOS Devices

作　　者：李冬梅[1] 皇甫丽英[1] 王志华[2] 勾秋静[1] 

机构地区：[1]清华大学电子工程系,北京100084 [2]清华大学微电子学研究所,北京100084

出　　处：《原子能科学技术》2007年第5期522-526,共5页Atomic Energy Science and Technology

基　　金：国家自然科学基金资助项目(60372021/F010204)

摘　　要：采用非加固工艺,通过设计加固手段实现具有辐射容忍性能的器件,可使器件抗辐射加固成本大为降低。本工作研究商用标准0.6,μm体硅CMOS工艺下不同设计参数的MOS晶体管的γ射线总剂量辐照特性。通过对MOS器件在不同偏置情况下的总剂量辐照实验,分别对比了不同宽长比(W/L) NMOS管和PMOS管的总剂量辐照特性。研究表明,总剂量辐照引起阈值电压的漂移量对NMOS及PMOS管的W/L均不敏感;总剂量辐照引起亚阈区漏电流的增加随NMOS管W/L的减小而增加。研究结果可为抗辐射CMOS集成电路设计中晶体管参数的选择提供参考。The ionizing radiation effects on MOS transistors with different device sizes were studied. The test devices were designed and fabricated in a commercial 0.6 μm standard bulk CMOS process. Device parameters were monitored before and after ^60Co γ-rays irradiation with total dose of 9.6 kGy（Si）. The experiment results show that the threshold voltage shift after y-ray irradiation is not sensitive to W/L in both NMOS and PMOS devices. The increases of leakage between source and drain induced by irradiation are different in different sized NMOS devices. For the same channel length NMOS devices, smaller W/L causes larger leakage.

关 键 词：MOS晶体管 宽长比 辐射效应 总剂量 

分 类 号：TN386.1[电子电信—物理电子学]