反铁磁性交换作用对稀磁半导体(DMS)居里温度的影响  

Influence of Anti-ferromagnetic Exchange Interaction on the Curie Temperature of DMS

作　　者：胡作启[1] 陈飞[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《磁性材料及器件》2007年第4期21-24,共4页Journal of Magnetic Materials and Devices

摘　　要：DMS的居里温度与空穴载流子浓度有着极大的关系。基于局域空穴模型,本文定量地分析了反铁磁性交换作用对DMS居里温度的影响。结果表明反铁磁性交换作用对居里温度的影响与磁性离子浓度ni和空穴浓度nc的比值有着密切关系.当ni/nc>10000 时,反铁磁性交换作用对居里温度的影响十分显著;当 ni/nc<10时,反铁磁性交换作用对居里温度的影响将会明显减弱,随着空穴浓度的增加,空穴对反铁磁性交换作用有强的抑制作用。Curie temperature of diluted magnetic semiconductor （DMS） has a strong dependence on the hole carrier concentration. In this paper, we analyzed the influence of anti-ferromagnetic exchange interaction on the Curie temperature of DMS based on the local hole model. The results showed that the influence of anti-ferromagnetic exchange interaction on the Curie temperature is closely related to the concentration ratio of magnetic ions to holes. When ni/nc〉10000, the influence of anti-ferromagnetic exchange interaction on the Curie temperature is very noticeable. When ni/nc〉10, the above-mentioned influence will be significantly weakened. With the increase of hole concentration, the holes will greatly restrain the anti-ferromagnetic exchange interaction.

关 键 词：稀磁半导体 居里温度 反铁磁性交换作用 

分 类 号：TN304.7[电子电信—物理电子学]