45nm工艺与关键技术  

45 nm Technology and Crucial Technique

作　　者：翁寿松[1] 

机构地区：[1]无锡市罗特电子有限公司,江苏无锡214001

出　　处：《微纳电子技术》2007年第9期863-867,共5页Micronanoelectronic Technology

摘　　要：介绍了45 nm芯片所采用的关键工艺技术:193 nm ArF干法/浸没式光刻技术、低k电介质技术、高k电介质技术和应变硅技术等。英特尔45 nm全功能153 MB SRAM芯片与65 nm芯片相比,晶体管密度提高了2倍,晶体管开关速度提高20%以上,晶体管漏电流降低到65 nm芯片的1/5,存储单元面积为0.346μm2。指出英特尔45 nm芯片MPU将在2007年下半年实现量产,并且继英特尔之后,TI、IBM、特许、英飞凌、三星、台积电和台联电等均已推出了45 nm芯片,说明45 nm芯片技术正在日益走向成熟。The crucial techniques of the 45 nm chip technology, such as 193 nm ArF dry/immersion lithography, low and high k dielectric techniques, strained silicon technique and so on, are intruduced. Compared with the 65 nm chip, the Intel 45 nm full function 153 MB SRAM chip raises the transistor density to three times, increases the transistor switching speed by over 20%, decreases the transistor leakage current by a factor of five, and has 0.346 μm^2 area of the memory cell. The Intel 45 nm MPU are mass-producing in the second half of 2007. TI, IBM, Chartered, Infineon, Samsung, TSMC and UMC also produce the 45 nm chip. These indicate that 45 nm technology is going to be mature.

关 键 词：45 nm工艺 193 NM ArF光刻技术 低k电介质技术 高k电介质技术 应变硅技术 

分 类 号：TN405[电子电信—微电子学与固体电子学]