0.7V,11ppm/℃,纳瓦功耗的基准源  

0.7V, 11ppm/℃, Nanowatte Voltage Reference

作　　者：郭宝增[1] 陈迎乐[1] 王永青[1] 姚金宝[1] 

机构地区：[1]河北大学电子信息工程学院,河北071002

出　　处：《微计算机信息》2007年第29期310-312,共3页Control & Automation

基　　金：河北省科技厅科技攻关计划项目(批准号:07217124)

摘　　要：介绍了一种简单的高性能基准源电路,该电路利用了工作在饱和区和亚阈值区的MOS晶体管迁移率和阈值电压温度特性进行补偿,此外还利用二极管反相偏置电流的温度特性来改进电路的高温段的特性。使用HSPICE进行模拟,结果表明在电源电压为0.9V,温度在?20℃至120℃之间变化时,输出的基准电压为525mV,温度系数为11ppm/℃,功耗只有736nW。该电路电源电压可低至0.7V。电源噪声频率为1kHz时的电源抑制比为?48dB。We present a simple voltage reference circuit with high performance. It bases on the MOS transistor characteristics in the saturation and subthreshold regions using the compensation of mobility and threshold voltage temperature effects, and the high temperature characteristic of the diode reversed-biased-current are also used to improve the high temperature property of the circuit. This circuit is simulated by HSPICE. It generates a reference voltage of 525 mV and has a temperature coefficient of 11ppm/℃ in the range from -20℃ to 120℃ at supply voltage of 0.9V with power consumption of 736 nanowatt, Its supply voltage can be as low as 0,7V. It has a PSRR of 48dB at lkHz.

关 键 词：补偿 低功耗 低压 高精度 电压源 EEACC 1205 1280 2560 2570D 

分 类 号：TN432.1[电子电信—微电子学与固体电子学]