Study of white light emission from ZnS/PS composite system  

作　　者：王彩凤 李清山 吕磊 张立春 齐红霞 

机构地区：[1]College of Physics and Engineering,Qufu Normal University

出　　处：《Chinese Optics Letters》2007年第9期546-548,共3页中国光学快报（英文版）

基　　金：the Natural Science Foundation of Shandong Province under Grant No.Y2002A09.

摘　　要：ZnS films were deposited by pulsed laser deposition （PLD） on porous silicon （PS） substrates formed by electrochemical anodization of p-type （100） silicon wafer. The photoluminescence （PL） spectra of ZnS/PS composites were measured at room temperature. Under different excitation wavelengths, the relative integrated intensities of the red light emission from PS layers and the blue-green emission from ZnS films had different values. After samples were annealed in vacuum at different temperatures （200, 300, and 400 ~C） for 30 min respectively, a new green emission located at around 550 nm appeared in the PL spectra of all ZnS/PS samples, and all of the ZnS/PS composites had a broad PL band （450 - 700 nm） in the visible region, exhibiting intensively white light emission.ZnS films were deposited by pulsed laser deposition （PLD） on porous silicon （PS） substrates formed by electrochemical anodization of p-type （100） silicon wafer. The photoluminescence （PL） spectra of ZnS/PS composites were measured at room temperature. Under different excitation wavelengths, the relative integrated intensities of the red light emission from PS layers and the blue-green emission from ZnS films had different values. After samples were annealed in vacuum at different temperatures （200, 300, and 400 ~C） for 30 min respectively, a new green emission located at around 550 nm appeared in the PL spectra of all ZnS/PS samples, and all of the ZnS/PS composites had a broad PL band （450 - 700 nm） in the visible region, exhibiting intensively white light emission.

关 键 词：Light emission PHOTOEXCITATION PHOTOLUMINESCENCE Porous silicon Pulsed laser deposition Silicon wafers Thin films 

分 类 号：O472.3[理学—半导体物理]