532nm连续激光对砷化镓材料损伤的研究  

532 nm CW laser induced damage of GaAs materials

作　　者：李永富[1] 祁海峰[1] 王青圃[1] 张行愚[1] 刘泽金[2] 王玉荣[1] 魏爱俭[1] 夏伟 张飒飒[1] 

机构地区：[1]山东大学信息科学与工程学院,山东济南250100 [2]国防科技大学光电科学与工程学院,湖南长沙410073 [3]山东华光光电子有限公司,山东济南250101

出　　处：《量子电子学报》2007年第5期625-629,共5页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金(69978009)和(60677027);教育部博士点基金(20060422025)

摘　　要：利用532 nm连续激光对掺Si的n型砷化镓材料进行作用,材料的晶轴方向为<100>偏<111A>方向15°。实验观察到,连续激光与材料相互作用过程中,材料作用表面的反射光在观察屏上形成环状结构,认为是由夫琅和费衍射产生的,并首次提出将衍射作为探测材料损伤的方法。实验测得砷化镓的阈值损伤功率密度为2.56×10~5 W/cm^2。利用温度场的热传导方程计算获得材料的损伤阈值时间与入射光功率密度的关系曲线,并与实验曲线进行了比较。An experiment was designed to study 532 nm CW laser radiation on Si-doped n-type GaAs materials. The crystal axis of GaAs is （100） leaning to （111A） 15°. As the laser irradiated on the materials, a diffraction-like phenomenon was observed. It was considered as the Fraunhofer diffraction formed by the reflected light from the material surface, and diffraction was developed as a new detecting method of the damage threshold for the first time. A damage threshold power density of GaAs materials, 2.56 × 10^5 W/cm^2, was tested experimentally. The heat conduction equation was used to describe the interaction process, and the experimental and theoretical curves of the incident laser power density versus damage threshold time of GaAs were obtained.

关 键 词：激光技术 激光损伤阈值 夫琅和费衍射 砷化镓材料 532 nm连续激光 热传导 

分 类 号：TN249[电子电信—物理电子学] O434.19[机械工程—光学工程]