GaAs光导开关超短电脉冲响应特性的研究  

Research on Response Property of Ultra-Short Electrical Pulse of Semi-Insulting GaAs Photoconductive Switches

作　　者：戴慧莹[1] 马德明[1] 施卫[1] 

机构地区：[1]西安理工大学理学院

出　　处：《西安理工大学学报》2007年第3期236-239,共4页Journal of Xi'an University of Technology

基　　金：国家自然科学基金资助项目(50477011)

摘　　要：用1064 nm激光脉冲触发半绝缘GaAs光导开关,对线性模式输出超短电脉冲响应特性进行了测试,并对所测试的实验结果进行理论分析。分别给出了在偏置电压和触发光能一定的条件下,超短电脉冲响应特性的变化规律;指出影响超短电脉冲响应特性的主要原因是由于缺陷能级的俘获作用,共面微带传输线对超短电脉冲波形不产生明显的影响。The response properties of linear mode output ultra-short electric pulse are tested using the semi-insulating GaAs photoconductive switches triggered by 1064 nm laser pulse; and the tested experimental results are analyzed theoretically. Also, the changing laws of responsive properties of ultra-short electric pulse under the certain condition of bias voltage and triggering light energy are given. This paper points out that the main cause affecting the response properties of ultra-short electric pulse is due to the capture function of defect energy level and that the cosurface micro-carrying transmission line can produce no apparent effect upon ultra-short pulse waveforms.

关 键 词：光导开关 响应特性 缺陷能级 

分 类 号：TN201[电子电信—物理电子学]