铁磁/半导体/铁磁隧道结中的隧穿磁电阻  

Tunnel magnetic resistance in ferromagnetic/semiconductor/ferromagnetic tunnel junctions

作　　者：张红梅[1] 

机构地区：[1]河北科技大学理学院,河北石家庄050018

出　　处：《河北科技大学学报》2007年第3期194-197,217,共5页Journal of Hebei University of Science and Technology

基　　金：河北省科技厅指导计划项目(07215116);河北科技大学校立科研基金资助项目(XL2006048)

摘　　要：采用相干量子输运理论和传递矩阵方法研究了具有不同自旋指向的极化电子渡越铁磁/半导体/铁磁隧道结的隧穿几率和隧穿磁电阻。研究表明隧穿几率和隧穿磁电阻随半导体长度的改变发生周期性变化、随Rashba自旋轨道耦合强度的改变发生准周期变化,并且在两铁磁电极中磁矩取向平行时,选择适当的半导体的长度和Rashba自旋轨道耦合强度可以得到较大的隧穿磁电阻。By using the coherent quantum transport theory and transfer matrix method, the transmission coefficient and tunnel magnetic resistance for polarized electrons with different spin orientations through ferromagnetic/semiconductor/ferromagnetic tunnel junctions are investigated. The results indicate that the transmission coefficient and tunnel magnetic resistance changes periodicaly in accordance with the change of the length of the semiconductor, and changes quasi-periodically with the change of the Rashba spin-orbit effect. A moderate length of the semiconductor and appropriate Rashba spin-orbit effect allow a giant tunnel magnetic resistance with parallel magnetization.

关 键 词：隧道结 隧穿几率 隧穿磁电阻 自旋轨道耦合 

分 类 号：O485[理学—固体物理]