ICP刻蚀硅模板用于PDMS规则超疏水表面的制作  

PDMS Regularly Superhydrophobic Surfaces Prepared by ICP Etching Silicon Model

作　　者：张润香[1] 张玉龙[2] 林华水[1] 

机构地区：[1]厦门大学化学化工学院化学系,福建厦门361005 [2]厦门大学萨本栋微机电中心,福建厦门361005

出　　处：《电化学》2007年第3期264-268,共5页Journal of Electrochemistry

基　　金：国家自然科学基金项目(20475047);专项基金项目(29927001)资助

摘　　要：在ICP(inductively coupled plasma)刻蚀后的硅模板上复制聚二甲基硅氧烷(PDMS),经剥离得到含有一定尺寸的规则微柱阵列疏水表面.实验表明,当微柱高度较小时,微柱高度和边长对接触角有正影响,而间距则呈负影响;但如微柱高度较大,则高度对接触角的影响趋小,而边长呈负影响.间距对接触角的影响表现复杂.微柱间距6μm,边长14μm和高14μm微柱阵列的PDMS表面,静态接触角最大,约151°.A series of different dimensions regularly micropillar array hydrophobic Poly （dimethylsiloxane） （PDMS） surfaces were obtained by peeling off PDMS which was poured onto the silicon models. The silicon models were prepared by ICP etching technology. The results indicate that the water contact angle （WCA） was increased with the size and the height of the mocropillar, decreased with increasing the distance of the mocropil- lar when the height of the micropillar was relative small; if the height of the micropillar was relative big, WCA was decreased with increasing the size of micropillar, meanwhile, the distance of the micropillar was a complex factor to WCA, and the height of the micropillar have little influence. The biggest of WCA on this micopillar array PDMS surface can reach to about 151° when the size, distance, height of the mlcropillar were 14μm,6μm, 14μm respectively.

关 键 词：ICP刻蚀 硅模板 PDMS 超疏水 

分 类 号：O647[理学—物理化学]