SiN介质薄膜内应力的实验研究  

Study of Internal Stress in Silicon Nitride Dielectric Thin Films

作　　者：石霞[1] 孙俊峰[1] 顾晓春[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《半导体技术》2007年第10期851-853,870,共4页Semiconductor Technology

摘　　要：研究了低压化学气相淀积SiN(LPCVD)介质薄膜的内应力,采用XP-2型台阶仪测量了SiN介质薄膜的内应力,通过改变薄膜淀积时的工艺参数,观察了反应气体流量比、淀积温度、反应室压力等因素对SiN薄膜内应力的影响。讨论了应力产生的原因以及随工艺条件变化的机理,通过工艺条件的合理选择逐步优化工艺。　The internal stress in silicon-nitride thin films prepared by low-pressure chemical vapor deposition（LPCVD） was studied measured by XP-2 stylus profilometer.By changing the deposition conditions,the influence of critical process parameters,such as gas flux-rate,temperature of deposition,gas pressure in chamber on SiN thin films stress was investigated.Furthermore,the cause of stress and the mechanism of different process conditions were discussed.The process was optimized by reasonably adjusting the process conditions and good results are obtained.

关 键 词：内应力 氮化硅薄膜 低压化学气相淀积 

分 类 号：TN304.055[电子电信—物理电子学]