C_3N_4薄膜的结构与性能研究  

STRUCTURE AND CHARACTERISTICS OF C 3N 4 THIN FILMS

作　　者：吴大维[1] 何孟兵[1] 郭怀喜[1] 罗海林 张志宏[1] 傅德君[1] 范湘军[1] 

机构地区：[1]武汉大学物理系

出　　处：《物理学报》1997年第3期530-535,共6页Acta Physica Sinica

基　　金：国家自然科学基金资助的课题

摘　　要：用射频等离子体增强化学汽相沉积技术合成Ｃ３Ｎ４薄膜，并采用强迫晶化技术，经透射电子衍射观测，薄膜具有多晶结构．用Ｘ射线光电子能谱测试了Ｃ，Ｎ原子结合能及含氮量．傅里叶变换红外光谱曲线表明薄膜中不含石墨相．测得薄膜的维氏硬度为２９．２—５０．Nitride carbon thin films have been deposited by plasma enhanced chemical vapor phase deposition. The results of transmission electron diffraction indicated that films have polycrystal structures. Carbon and nitrogen atoms binding energies and the nitrogen content of the films are measured out by X ray photoelectron spectroscopy.The Fourier transform infrared spectrum show that there is no graphite phase in the films,and the Vickers hardness of the films vary from 29 2 to 50 0GPa.

关 键 词：C3N4 氮化碳 薄膜结构 性能 

分 类 号：O484.1[理学—固体物理]