偏流对金刚石膜生长的影响  

Influence of the Bias Current on the Growth of Diamond film

作　　者：支文[1] 赵利军[1] 毕冬梅[1] 朱莉[1] 

机构地区：[1]长春大学理学院特殊教育学院,长春130022

出　　处：《长春理工大学学报（自然科学版）》2007年第3期108-109,113,共3页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：吉林省科技厅资助项目;低成本高能量密度锂离子电池正极材料的研制;合同编号:10647104吉教科合字[2005]第85号

摘　　要：采用电子辅助热灯丝化学气相沉积(EA-CVD)方法沉积大面积金刚石膜,在金刚石膜的沉积过程中,偏流对金刚石膜沉积的影响会直接影响着金刚石膜的生长和质量。用Raman、SEM等手段对金刚石膜的生长特性进行了表征。Large area diamond films were deposited by EA-CVD method. During deposition, the growth and quality of diamond films were influenced by the change of the distance between the filament and the substrate. The growth property of diamond film was characterized by the use of Laman spectrum and scan transmission electron microscopy （SEM）.

关 键 词：金刚石膜 偏流 膜的质量 

分 类 号：O484[理学—固体物理]