常压射频冷等离子体刻蚀硅的研究  

Etching Si Wafer Using Atmospheric Pressure RF Cold Plasma Jet

作　　者：赵玲利[1] 段小晋[1] 尹明会[1] 徐向宇[2] 王守国[2] 

机构地区：[1]中国科学院微电子研究所,北京100010 [2]中国科学院光电研究院,北京100080

出　　处：《Journal of Semiconductors》2007年第10期1615-1619,共5页半导体学报（英文版）

摘　　要：介绍一种新型的常压射频低温冷等离子放电设备,并用该设备进行硅刻蚀的工艺实验.研究了刻蚀硅的速率随等离子体放电功率、气体流量以及衬底温度的变化规律,并得到了最大刻蚀速率为390nm/min.利用台阶仪、显微镜和扫描电镜(SEM)对刻蚀效果进行检测与分析,证实了该设备对硅的浅刻蚀具有较好的均匀性和较高的各向异性.结果表明,该设备在常压下刻蚀硅,操作简单且不易对材料表面产生损伤.A new kind of discharging device with a RF cold plasma jet at atmospheric pressure is introduced,and it is utilized to conduct experimental research on silicon-etching. The characteristics of the etching rate depend on the input power, gas flow,and temperature of Si wafers. The maximal etching rate is 390nm/min. The etching effect is characterized by step instrument,optical microscopy, and SEM. Excellent etching homogeneity and satisfactory anisotropy can be obtained during material etching with this device. These results indicate that the silicon-etching operation with this atmospheric pressure device is simple and causes no material surface damage.

关 键 词：常压 射频 等离子体刻蚀 硅 

分 类 号：TN405[电子电信—微电子学与固体电子学]