InP/GaAs异质外延及异变InGaAs光探测器制备  

InP/GaAs Heteroepitaxy and Fabrication of Metamorphic InGaAs Photodetectors

作　　者：王琦[1] 任晓敏[1] 熊德平[1] 周静[1] 吕吉贺[1] 黄辉[1] 黄永清[1] 蔡世伟[1] 

机构地区：[1]光通信与光波技术教育部重点实验室

出　　处：《光电子．激光》2007年第10期1143-1145,1149,共4页Journal of Optoelectronics·Laser

基　　金：国家重点基础研究发展计划资助项目(2003CB314901);国际科技合作重点项目计划资助项目(2006DFB11110);高等学校学科创新引智计划资助项目(B07005);教育部新世纪人才支持计划资助项目(NCET-05-0111)

摘　　要：借助超薄低温InP缓冲层,在GaAs衬底上生长出了高质量的InP外延层,在InP外延层中插入了15周期In0.93Ga0.07P/InP应变层超晶格(SLS),进一步阻断了失配位错穿透到晶体表面,提高了外延层的晶体质量,这样2.5μm厚InP外延层的双晶X射线衍射(DCXRD)ω扫描半高全宽(FWHM)值降低至219 arcsec,该InP外延层的室温光荧光(PL)谱线宽度仅为42 meV。在此基础上,只利用超薄低温InP缓冲层技术就在半绝缘GaAs衬底上成功地制备出了长波长异变In0.53Ga0.47As PIN光电探测器,器件的台面面积为50μm×50μm,In0.53Ga0.47As吸收层厚度为300 nm,在3 V反偏压下器件的3 dB带宽达到了6 GHz,在1550 nm波长处器件的响应度达到了0.12 A/W,对应的外量子效率为9.6%。High-quality InP epilayers were grown on GaAs substrates by using the ultrathin low temperature InP buffer layer. A 15-period In0. 93 Ga0. 07 P/InP strained layer superlattice（SLS） was inserted into the normal InP layers, which blocked the vertical propagation of theading dislocat5ion and further improved the crystal quality of InP epilayer. The DCXROω san full width at half maximum （FWHM） of 219 arcsec and the room-temperature PL linewidth of 42 meV were obtained for 2. 5μm-thick InP epilayer. Additonally, the long-wavelength metamorphic In0. 53 Gao. 47 As PIN photodetectors grown on semi insulating GaAs substrates were sucessfully demonstrated by low temperautre InP buffer technology. The active area of this photodetector was 50 μm×50 μm,and the thickness of In0. 53 Gao. 47 As adsorption layer was 300 nm The 3 dB bandwidth of frequency response reached 6 GHa The responsivity of 0. 12 A/W to 1 550 nm optical radiation, corresponding to the external quantum efficiency of 9.6%, was achieved.

关 键 词：异质外延 低温InP缓冲层 应变层超晶格(SLS) 光探测器 

分 类 号：TN366[电子电信—物理电子学]