室温下脉冲激光沉积制备高取向度AlN薄膜  

Highly Oriented AlN Thin Films Grown on Si(100) Substrates at Room Temperature by Pulsed Laser Deposition

作　　者：吕磊[1] 李清山[1] 李丽[1] 张立春[1] 齐红霞[1] 王彩凤[1] 郑萌萌[1] 

机构地区：[1]曲阜师范大学物理系,山东曲阜273165

出　　处：《光电子．激光》2007年第10期1212-1214,共3页Journal of Optoelectronics·Laser

基　　金：山东省自然科学基金资助项目(Y2002A09)

摘　　要：用脉冲激光沉积（PLD）方法，在p-Si（100）衬底上、室温下和不同N2氛围中制备了高度取向的A1N薄膜，并利用X射线衍射（XRD）仪、傅立叶变换红外（FTIR）光谱仪和扫描电子显微镜（SEM）对样品的特征进行了研究。结果表明，在从5×10^-6～5．0Pa的N2气压范围内，制备的薄膜都呈现h＜100〉晶向，并且随着气压的升高，样品的结晶度有明显的提高。另外，随着N2浓度的增大，Al-N键的结合度增强，AlN晶粒的尺寸增大，在样品表面出现杂散晶粒，薄膜的粗糙度增大。Highly oriented AlN films were fabricated on p-Si（100） substrates at room temperature by pulsed laser deposition （PLD） ,and the effect of N2 pressure on the quality of the films was studied by XRD,FTIR and SEM investigations. The results show that all films deposited over a large range of N2 pressures from 5 ×10^-6 Pa to 5.0 Pa exhibit good crystal properties with sharp X-ray diffraction peaks at 2θ= 33.15° ,corresponding to AlN h〈100〉 crsytalline orientation. The crystallinity of the films gets remarkably better when the N2 pressure rises from 5 ×10^- 6 Pa to 5.0 Pa. Furthermore, the combination of Al-N bond is strengthened when the density of N2 increases,but the surface morphology of the films get rougher.

关 键 词：ALN薄膜 脉冲激光沉积(PLD) 高取向度 室温 

分 类 号：O484.1[理学—固体物理]