HgCdTe器件中载流子扩散长度的硼离子注入效应研究  

Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction

作　　者：陈贵宾[1] 全知觉[2] 王少伟[2] 陆卫[2] 

机构地区：[1]淮阴师范学院物理系和低维材料化学省重点建设实验室,江苏淮安223001 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《光子学报》2007年第4期595-598,共4页Acta Photonica Sinica

基　　金：国家自然科学基金(60244002;10234040);江苏省高校自然科学研究项目(05KJD140038)资助

摘　　要：报道了非直接接触、高分辨率的激光束诱导电流谱表征技术在检测半导体材料、器件工艺中的应用.研究结果表明:p型HgCdTe薄膜经硼离子注入后形成的n型区面积大于实际的离子注入区域;对不同注入剂量系列单元不同区域载流子扩散长度进行了提取,表明n区载流子扩散长度随硼离子注入剂量增加而减小.　The line scan and mapping profiles of a series of HgCdTe n-on-p junctions with different boron implantation dose have been measured by laser beam induced current.The n-type region is larger than the actually boron-implanted area.The minority carrier diffusion length both inside and outside at p-n junction boundary can be extracted from the LBIC line scan profile.The response enhancement for the small optically sensitive area devices is due to enlarging the n-type area and carriers collecting effect on the external side.

关 键 词：离子注入 P-N结 激光束诱导电流谱(LBIC) 扩散长度 

分 类 号：TN249[电子电信—物理电子学]