离子辅助反应蒸发技术室温制备ITO薄膜  

Preparation of ITO Films Deposited at Room Temperature by Ion Beam-Assisted Reactive Evaporation

作　　者：喻志农[1] 相龙锋[1] 薛唯[1] 王华清[1] 卢维强[1] 

机构地区：[1]北京理工大学信息科学技术学院光电工程系,北京100081

出　　处：《北京理工大学学报》2007年第10期924-927,共4页Transactions of Beijing Institute of Technology

基　　金：北京市自然科学基金资助项目(3063022);北京理工大学优秀青年教师资助计划(059852);北京理工大学基础研究基金资助项目(200501F4220)

摘　　要：室温下利用离子辅助反应蒸发法在玻璃衬底上制备高透射比、低电阻率的ITO透明导电薄膜.实验结果表明离子辅助蒸发可以有效地降低制备温度,提高薄膜的光电特性,薄膜具有明显的(222)择优取向,晶体粒子尺寸约为21 nm;离子源屏压、通氧量及沉积速率是影响薄膜光电特性的主要因素.室温制备的ITO薄膜电阻率为2.4×10-3Ω.cm,可见光平均透射比大于82%.ITO films with high transmission and low resistivity have been prepared on glass substrate by ion beam-assisted reactive evaporation at room temperature. Experimental results showed that the deposition temperature can be decreased effectively and the photoelectric properties can be improved. The deposited films are polycrystalline with a preferred orientation of （222） and the size of crystal particle is about 21 nm. Oxygen flux, evaporation rate and ion energy are the chief factors that affect the opto-electfic properties of ITO films. Films with a resistivity as low as 2.4 × 10^- 3Ω· cm and the transmittance of above 82 % in the visible range have been deposited at room temperature.

关 键 词：离子辅助反应蒸发技术 室温 ITO薄膜 

分 类 号：O484.4[理学—固体物理]