LBIC技术研究InGaAs线列探测器串音及光敏感区  

Crosstalk and photoactive area of InGaAs linear detector by LBIC technique

作　　者：吕衍秋[1] 乔辉[1] 韩冰[1] 唐恒敬[1] 吴小利[1] 李雪[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室

出　　处：《红外与激光工程》2007年第5期708-710,共3页Infrared and Laser Engineering

基　　金：国家自然科学基金重点资助项目(50632060)

摘　　要：利用激光诱导电流技术研究了InGaAs台面探测器的相邻探测器间的串音和光敏感区。用分子束外延方法生长掺杂InGaAs的PIN InP/InGaAs/InP外延材料,制备了256×1正照射台面InGaAs线列探测器。测试结果表明,InGaAs线列探测器相邻探测器间没有串音,虽然台面结构周围吸收层已被腐蚀,但因为少数载流子的侧向收集,扩大了有效光敏感区。The crosstalk and photoactive area of neighbor mesa InGaAs detectors are studied by LBIC technique. Based on doped-InGaAs MBE-grown PIN InP/InGaAs/InP epitaxial materials, 256×1 front- illuminated mesa In GaAs detector arrays are made . Measurement results show that there are no crosstalk between neighbor mesa InGaAs detectors. Photoactive area of InGaAs detector is extended because of the side- collecting of minority carriers, though absorbing layer around mesa structure was etched.

关 键 词：激光诱导电流技术 INGAAS 探测器 串音 光敏感区 

分 类 号：TN21[电子电信—物理电子学]