Growth and Characterization of InN Thin Films on Sapphire by MOCVD  

作　　者：谢自力 张荣 修向前 刘斌 李亮 韩平 顾书林 施毅 郑有炓 

机构地区：[1]Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093

出　　处：《Chinese Physics Letters》2007年第4期1004-1006,共3页中国物理快报（英文版）

基　　金：Supported by the Special Funds for Major State Basic Research Project of China under Grant No 2006CB6049, the National Natural Science Foundation of China under Grant Nos 6039072, 60476030, 60421003 and 60676057, the Ministry of Education of China （10416）, the Research Fund for the Doctoral Programme of Higher Education of China （20050284004）, and the Natural Science Foundation of Jiangsu Province （BK2005210 and BK2006126）.

摘　　要：Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm^2 /Vs, and 3.9 × 1018cm^-3, respectively.Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm^2 /Vs, and 3.9 × 1018cm^-3, respectively.

关 键 词：MOLECULAR-BEAM EPITAXY LOW-TEMPERATURE BAND-GAP RF-MBE ALLOYS 

分 类 号：O484[理学—固体物理]