Microwave Response of MgB2/A12O3 Superconducting Thin Films by Microstrip Resonator Technique  

作　　者：史力斌 郑岩 任骏原 李明标 张凤云 李波欣 董海宽 

机构地区：[1]Department of Physics, Bohai University, Jinzhou 121000

出　　处：《Chinese Physics Letters》2007年第6期1713-1716,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 10174006.

摘　　要：Double-sided superconducting MgB2 thin films are deposited onto c-A120a substrates by the hybrid physical chemical vapour deposition method. The microwave response of MgB2/A12O3 is investigated by microstrip resonator technique. A grain-size model is introduced to the theory of microstrip resonators to analyse microwave properties of the films. We obtain effective penetration depth of the films at OK （λe0 = 463nm） and surface resistance （R8 = 1.52 mΩ at 11 K and 8. 73 GHz） by analysing the resonant frequency and unload quality factor of the microstrip resonator, which suggests that the impurities and disorders of grain boundaries of MgB2/A12 Oa result in increasing penetration depth and surface resistance of the films.Double-sided superconducting MgB2 thin films are deposited onto c-A120a substrates by the hybrid physical chemical vapour deposition method. The microwave response of MgB2/A12O3 is investigated by microstrip resonator technique. A grain-size model is introduced to the theory of microstrip resonators to analyse microwave properties of the films. We obtain effective penetration depth of the films at OK （λe0 = 463nm） and surface resistance （R8 = 1.52 mΩ at 11 K and 8. 73 GHz） by analysing the resonant frequency and unload quality factor of the microstrip resonator, which suggests that the impurities and disorders of grain boundaries of MgB2/A12 Oa result in increasing penetration depth and surface resistance of the films.

分 类 号：O47[理学—半导体物理]